Anomalous polarization dependence of Raman scattering and crystallographic orientation of black phosphorus.
نویسندگان
چکیده
We investigated polarization dependence of the Raman modes in black phosphorus (BP) using five different excitation wavelengths. The crystallographic orientation was determined by comparing polarized optical microscopy with high-resolution transmission electron microscopy analysis. In polarized Raman spectroscopy, the B2g mode shows the same polarization dependence regardless of the excitation wavelength or the sample thickness. On the other hand, the Ag(1) and Ag(2) modes show a peculiar polarization behavior that depends on the excitation wavelength and the sample thickness. The thickness dependence can be explained by considering the anisotropic interference effect due to the birefringence and dichroism of the BP crystal, but the wavelength dependence cannot be explained. We propose a simple and fail-proof procedure to determine the orientation of a BP crystal by combining polarized Raman scattering with polarized optical microscopy.
منابع مشابه
Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses.
Anisotropic layered semiconductors have attracted significant interest due to the huge possibility of bringing new functionalities to thermoelectric, electronic and optoelectronic devices. Currently, most reports on anisotropy have concentrated on black phosphorus and ReS2, less effort has been contributed to other layered materials. In this work, two-dimensional (2D) orthorhombic SnS flakes on...
متن کاملرشد و بررسی خواص بلور TGSP به عنوان آشکار ساز فروسرخ
Triglycine sulfate, TGS, and its phosphated counterpart, TGSP, have been grown by saturation solution method and were investigated for growth conditions and crystallographic parameters.Structural analysis equipments such as X-ray diffraction and back-scattering laser micro-Raman spectroscopy have been employed for the investigation of the grown crystals and the experimental results obtained for...
متن کاملLow-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus.
As a new two-dimensional layered material, black phosphorus (BP) is a very promising material for nanoelectronics and optoelectronics. We use Raman spectroscopy and first-principles theory to characterize and understand the low-frequency (LF) interlayer breathing modes (<100 cm(-1)) in few-layer BP for the first time. Using a laser polarization dependence study and group theory analysis, the br...
متن کاملRaman spectroscopy of graphene edges.
Graphene edges are of particular interest since their orientation determines the electronic properties. Here we present a detailed Raman investigation of graphene flakes with edges oriented at different crystallographic directions. We also develop a real space theory for Raman scattering to analyze the general case of disordered edges. The position, width, and intensity of G and D peaks are stu...
متن کاملPhonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopy.
We present a systematic study of the Raman spectra of optical phonons in graphene monolayers under tunable uniaxial tensile stress. Both the G and 2D bands exhibit significant red shifts. The G band splits into 2 distinct subbands (G(+), G(-)) because of the strain-induced symmetry breaking. Raman scattering from the G(+) and G(-) bands shows a distinctive polarization dependence that reflects ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Nanoscale
دوره 7 44 شماره
صفحات -
تاریخ انتشار 2015